Datasheet Summary
50 V, 3 A PNP low VCEsat (BISS) transistor
21 June 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- Higher efficiency leading to less heat genereation
- High temperature applications up to 175 °C
- AEC-Q101 qualified
3. Applications
- Power management
- DC-to-DC conversion
- Supply line switches
- Battery charger switches
- Peripheral drivers
- Driver in low supply voltage...
