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PESD5V0R1BBSF-Q - Extremely low capacitance bidirectional ESD protection diode

General Description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family.

Key Features

  • Bidirectional ESD protection of one line.
  • Extremely low diode capacitance Cd = 0.08 pF.
  • Extremely low insertion loss αIL = -0.25 dB at 10 GHz.
  • Extremely low return loss αRL = -17 dB at 10 GHz.
  • Low clamping voltage to protect sensitive I/Os.
  • Extremely low-inductance protection path to ground.
  • Ultra small SMD package.
  • Extremely low leakage < 1 nA typical at 5 V.
  • Qualified according to AEC-Q101 and recommended for use.

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Datasheet Details

Part number PESD5V0R1BBSF-Q
Manufacturer Nexperia
File Size 226.53 KB
Description Extremely low capacitance bidirectional ESD protection diode
Datasheet download datasheet PESD5V0R1BBSF-Q Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PESD5V0R1BBSF-Q Extremely low capacitance bidirectional ESD protection diode 3 July 2025 Product data sheet 1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • Bidirectional ESD protection of one line • Extremely low diode capacitance Cd = 0.08 pF • Extremely low insertion loss αIL = -0.