PHB32N06LT Datasheet | Nexperia

N-channel Trench MOS logic level FET Rev. 02 - 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Suitable for logic level gate drive sources 1.3 Applications - General purpose switching - Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 5 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 20 A; VDS = 44 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 9 and 10 Min Typ Max Unit - - 60...