| Part Number | PHB32N06LT Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Featur. s TrenchMOS™ technology s Logic level compatible. 3. Applications s General purpose switching s Switched mode power supplies. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO-220AB), SOT404 (D2-PAK), simplified outline and symbol Description gate (g) mb mb d Simplified outline Symb. |
PHB32N06LT Datasheet and Specifications PDF
The PHB32N06LT is a N-channel enhancement mode field effect transistor.
Key Specifications
| Package | SOT |
|---|---|
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | PHB32N06LT Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Nexperia |
| Overview |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consu.
and benefits
* Suitable for logic level gate drive sources 1.3 Applications * General purpose switching * Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; V. |