Datasheet Summary
N-channel TrenchMOS logic level FET
Rev. 04
- 8 July 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Simple gate drive required due to low gate charge
- Suitable for logic level gate drive sources
1.3 Applications
- DC-to-DC convertors
- Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source
Tj ≥ 25 °C; Tj ≤ 175...
