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PHPT61002NYCLH - NPN transistor

General Description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHPT61002NYCLH 100 V, 2 A NPN high power bipolar transistor 31 March 2017 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK • High energy efficiency due to less heat generation 3. Applications • Load switch • Power management • Linear mode voltage regulator • Backlighting apllications 4. Quick reference data Table 1.