PMC85XP Overview
Description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Key Features
- Trench MOSFET technology
- NPN transistor built-in bias resistors
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
