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PMCA14UN - N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Ultra small package: 0.96 × 0.96 × 0.24 mm.
  • Trench MOSFET technology 3.

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Datasheet Details

Part number PMCA14UN
Manufacturer Nexperia
File Size 281.85 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMCA14UN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMCA14UN 12 V, N-channel Trench MOSFET 6 August 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Ultra small package: 0.96 × 0.96 × 0.24 mm • Trench MOSFET technology 3. Applications • Relay driver • Battery management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.