Datasheet Summary
12 V, N-channel Trench MOSFET
6 August 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Ultra small package: 0.96 × 0.96 × 0.24 mm
- Trench MOSFET technology
3. Applications
- Relay driver
- Battery management
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon...