Datasheet Summary
60 V, N-channel Trench MOSFET
13 May 2019
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Ultra small package: 1.48 × 1.48 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state...