PMCXB1000UE Overview
Key Specifications
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Trench MOSFET technology
- Very low threshold voltage for portable applications: VGS(th) = 0.7 V
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
