Datasheet Summary
30 V, plementary N/P-channel Trench MOSFET
27 June 2016
Product data sheet
1. General description plementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Very low threshold voltage for portable applications: VGS(th) = 0.7 V
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
- Relay driver
- High-speed line driver
- Level shifter
- Power management in battery-driven portables
4....