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PMDPB80XP
20 V, dual P-channel Trench MOSFET
Rev. 1 — 30 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for low voltage gate drive
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1.3 Applications
Charging switch for portable devices DC/DC converters Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management
1.4 Quick reference data
Table 1.