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PMDPB85UPE - dual P-channel MOSFET

Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • 2 kV ElectroStatic Discharge (ESD) protection 1.3.

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Datasheet preview – PMDPB85UPE

Datasheet Details

Part number PMDPB85UPE
Manufacturer nexperia
File Size 1.44 MB
Description dual P-channel MOSFET
Datasheet download datasheet PMDPB85UPE Datasheet
Additional preview pages of the PMDPB85UPE datasheet.

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Full PDF Text Transcription

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PMDPB85UPE 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.4 Quick reference data Table 1.
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