PMN120ENE Datasheet | Nexperia

description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits - Trench MOSFET technology - Logic-level patible - Very fast switching - Electro Static Discharge (ESD) protection > 2 k V HBM 3. Applications - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 2.4 A; Tj = 25 °C Min Typ Max - - 60 -20 - 20 [1] - - 3.1 - 96 123 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ Nexperia 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified...