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PMPB12R5UPE - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2) 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMPB12R5UPE 20 V, P-channel Trench MOSFET 24 February 2022 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2) 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 4. Quick reference data Table 1.