PMPB12R5UPE Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMPB12R5UPE Key Features
- Low threshold voltage
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2)
PMPB12R5UPE Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices