PMPB12UNE Overview
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Trench MOSFET technology
- Low threshold voltage
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100% solderable side pads for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
