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PMV100EPA - 60V P-channel MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • Very fast switching.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PMV100EPA
Manufacturer nexperia
File Size 279.71 KB
Description 60V P-channel MOSFET
Datasheet download datasheet PMV100EPA Datasheet
Additional preview pages of the PMV100EPA datasheet.

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Full PDF Text Transcription

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PMV100EPA 60 V, P-channel Trench MOSFET 21 April 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • Very fast switching • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.
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