PMV100XPEA
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection > 2 k V HBM
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max
VDS drain-source voltage Tj = 25 °C
- - -20
VGS gate-source voltage
-12
- 12
ID drain current
VGS = -4.5 V; Tamb = 25 °C
[1]
- - -2.4
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C resistance
- 97 128
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A mΩ
Nexperia
20 V, P-channel Trench MOSFET
5....
