PMV160UP
description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- 1.8 V RDSon rated
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
Tj = 25 °C VGS = -4.5 V; Tamb 25 °C
--
-8
- [1]
- -
-20 V 8V -1.2 A
RDSon drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C resistance
- 170 210 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2. Pin 1 2 3
Pinning information Symbol Description
G gate S source D drain
Simplified outline
SOT23...
