Datasheet4U Logo Datasheet4U.com

PMV164ENE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Extended temperature range Tj = 175 °C.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMV160UP 1.2A P-channel Trench MOSFET NXP Semiconductors
PMV16UN N-channel Trench MOSFET NXP Semiconductors
PMV117EN uTrenchMOS enhanced logic level FET NXP
PMV117EN N-Channel MOSFET VBsemi
PMV130ENEA N-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PMV164ENEA N-channel MOSFET
PMV160UP P-channel MOSFET
PMV16XN N-channel MOSFET
PMV100ENEA N-channel MOSFET
PMV100EPA 60V P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMV164ENE 60 V, N-channel Trench MOSFET 29 November 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.