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PMV32UP
20 V, 4 A P-channel Trench MOSFET
Rev. 1 — 11 March 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
1.8 V drain-source on-state resistance rated
Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj = 25 °C
voltage
VGS gate-source voltage
ID drain current Static characteristics
VGS = -4.5 V; Tamb = 25 °C
RDSon
drain-source on-state resistance
VGS = -4.
PMV32UP Datasheet
