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PMV33UPE
20 V, single P-channel Trench MOSFET
Rev. 1 — 12 June 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage Very fast switching
Trench MOSFET technology 2 kV ESD protected
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.
PMV33UPE Datasheet
