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PMV75UP
20 V, P-channel Trench MOSFET
25 April 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability: Ptot = 1000 mW
3. Applications
• LED driver • Power management • High-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.
PMV75UP Datasheet
