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PMX400UP - P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm.
  • Trench MOSFET technology.
  • Low profile (0.25 mm) 3.

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Datasheet Details

Part number PMX400UP
Manufacturer nexperia
File Size 273.05 KB
Description P-channel Trench MOSFET
Datasheet download datasheet PMX400UP Datasheet
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PMX400UP 20 V, P-channel Trench MOSFET 7 April 2021 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small package; 0.63 x 0.33 x 0.25 mm • Trench MOSFET technology • Low profile (0.25 mm) 3. Applications • Battery switch • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C VGS = -4.
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