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PMX400UPE - 20V P-Channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Leadless ultra small package 0.63 x 0.33 x 0.25 mm.
  • Trench MOSFET technology.
  • Low profile (0.25 mm).
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMX400UPE 20 V, P-channel Trench MOSFET 20 March 2023 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Leadless ultra small package 0.63 x 0.33 x 0.25 mm • Trench MOSFET technology • Low profile (0.25 mm) • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.