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PMXB65ENE - N-Channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection 1 kV.
  • Very low Drain-Source on-state resistance RDSon = 44 mΩ 3.

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NXP Logo PMXB65ENE N-channel Trench MOSFET NXP

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMXB65ENE 30 V, N-channel Trench MOSFET 3 November 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV • Very low Drain-Source on-state resistance RDSon = 44 mΩ 3. Applications • Low-side load switch and charging switch for portable devices • Power management in battery-driven portables • LED driver • DC-to-DC converters 4. Quick reference data Table 1.