PMXB65UPE - P-channel MOSFET

Product Overview

nexperia

Datasheet Details

Part number	PMXB65UPE
Manufacturer	nexperia
File Size	732.98 KB
Description	P-channel MOSFET
Datasheet	PMXB65UPE Datasheet
Additional preview pages of the PMXB65UPE datasheet.

Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Exposed drain pad for excellent thermal conduction.
ElectroStatic Discharge (ESD) protection 1.5 kV HBM.
Drain-source on-state resistance RDSon = 59 mΩ.
Very low gate-source threshold voltage for portable.

📁 Similar Datasheet

PMXB65ENE - N-channel Trench MOSFET (NXP)
PMXB120EPE - P-channel Trench MOSFET (NXP)
PMXB350UPE - P-channel Trench MOSFET (NXP)
PMXB360ENEA - N-channel Trench MOSFET (NXP)
PMXB40UNE - N-channel Trench MOSFET (NXP)
PMXB43UNE - N-channel Trench MOSFET (NXP)
PMXB56EN - N-channel Trench MOSFET (NXP)
PMXB75UPE - P-channel Trench MOSFET (NXP)

Other Datasheets by nexperia

PMXB65ENE - N-Channel MOSFET
PMXB120EPE - P-Channel MOSFET
PMXB350UPE - P-Channel MOSFET
PMXB360ENEA - N-Channel MOSFET
PMXB40UNE - N-Channel MOSFET
PMXB43UNE - N-Channel MOSFET

Published: Jul 28, 2019 |