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PMZB170VNE - 12V N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection typically > 2 kV.
  • Ultra thin package profile of 0.37 mm 3.

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Datasheet Details

Part number PMZB170VNE
Manufacturer Nexperia
File Size 280.28 KB
Description 12V N-channel Trench MOSFET
Datasheet download datasheet PMZB170VNE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMZB170VNE 12 V, N-channel Trench MOSFET 16 June 2025 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection typically > 2 kV • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.