Datasheet4U Logo Datasheet4U.com

PMZB220VPE - 12V P-channel Trench MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection typically > 2 kV.
  • Ultra thin package profile of 0.37 mm 3.

📥 Download Datasheet

Datasheet Details

Part number PMZB220VPE
Manufacturer Nexperia
File Size 277.03 KB
Description 12V P-channel Trench MOSFET
Datasheet download datasheet PMZB220VPE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZB200UNE N-channel Trench MOSFET NXP
PMZB290UN single N-channel Trench MOSFET NXP Semiconductors
PMZB290UNE single N-channel Trench MOSFET NXP Semiconductors
PMZB290UNE2 N-channel Trench MOSFET NXP
PMZB1200UPE P-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PMZB200UNE N-channel MOSFET
PMZB290UNE2 N-channel MOSFET
PMZB1200UPE P-channel MOSFET
PMZB150UNE N-channel MOSFET
PMZB170VNE 12V N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZB220VPE 12 V, P-channel Trench MOSFET 16 June 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection typically > 2 kV • Ultra thin package profile of 0.37 mm 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.