PMZB950UPEL Key Features
- Low leakage current
- Trench MOSFET technology
- Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
- Drain-source on-state resistance RDSon = 1.02 Ω
- Part: PMZB950UPEL
- Description: P-channel MOSFET
- Manufacturer: Nexperia
- Size: 719.07 KB
Other PMZB950UPEL Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PMZB950UPE | P-channel Trench MOSFET |