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PMZB950UPE Datasheet P-channel Trench MOSFET

Manufacturer: NXP Semiconductors

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Overview

PMZB950UPE 28 July 2014 SO T8 83 B 20 V, P-channel Trench MOSFET Product data sheet 1.

Key Features

  • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3.