PMZB950UPE Datasheet and Specifications PDF

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.

and benefits
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* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications
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* Relay driver High-speed line driver High-side load s.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and be.

and benefits
* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm
* ElectroStatic Discharge (ESD) protection > 1 kV HBM
* Drain-source on-state resistance RDSon = 1.02 Ω 3. Applications
* Relay driver
* High-speed line driver
* High-side load swi.