Datasheet Summary
1200 V, 20 A SiC Schottky diode in D2PAK R2P
30 April 2025
Product data sheet
1. General description
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior bined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
2. Features and benefits
- Zero forward and reverse recovery
- Temperature...