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PSC20120J - 1200V 20A SiC Schottky diode

General Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications.

Key Features

  • Zero forward and reverse recovery.
  • Temperature independent fast and smooth switching performance.
  • Outstanding figure of merit (Qc x VF).
  • High IFSM capability.
  • High power density.
  • Reduced system costs.
  • System miniaturization.
  • Reduced EMI 3.

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Datasheet Details

Part number PSC20120J
Manufacturer Nexperia
File Size 247.59 KB
Description 1200V 20A SiC Schottky diode
Datasheet download datasheet PSC20120J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSC20120J 1200 V, 20 A SiC Schottky diode in D2PAK R2P 30 April 2025 Product data sheet 1. General description Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. 2.