PSMN021-100YL
PSMN021-100YL is N-channel MOSFET manufactured by Nexperia.
description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using Trench MOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.
2. Features and benefits
- Advanced Trench MOS provides low RDSon and low gate charge
- Logic level gate operation
- Avalanche rated, 100 % tested
- LFPAK provides maximum power density in a Power SO8 package
3. Applications
- Synchronous rectification in power supply equipment
- Chargers & adaptors with Vout < 10 V
- Fast charge & USB-PD applications
- Battery powered motor control
- LED lighting & TV backlight
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD gate-drain charge
ID = 15 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 100 V
- - 49 A
- - 147 W
- 17.4 22 mΩ
- 13.3
- n C
Nexperia
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified...
