PSMN025-100HS - N-Channel MOSFET

Datasheet Summary

Description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.

Features

High peak drain current IDM.
Copper clip and flexible Leads.
High operating junction temperature Tj = 175 °C.
Superior reliability.
Low body diode reverse recovery charge Qr 3.

nexperia

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Datasheet Details

Part number	PSMN025-100HS
Manufacturer	nexperia
File Size	272.25 KB
Description	N-Channel MOSFET
Datasheet	PSMN025-100HS Datasheet
Additional preview pages of the PSMN025-100HS datasheet.

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Full PDF Text Transcription

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PSMN025-100HS N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. 2. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low body diode reverse recovery charge Qr 3. Applications • Synchronous rectifier • Forward and flyback converter • Industrial drive • Power management system • Uninterruptible Power Supply (UPS) 4. Quick reference data Table 1.

Published: Nov 21, 2024 |