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PSMN025-100HS - N-Channel MOSFET

General Description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.

2.

Key Features

  • High peak drain current IDM.
  • Copper clip and flexible Leads.
  • High operating junction temperature Tj = 175 °C.
  • Superior reliability.
  • Low body diode reverse recovery charge Qr 3.

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PSMN025-100HS N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology 26 September 2022 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. 2. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low body diode reverse recovery charge Qr 3. Applications • Synchronous rectifier • Forward and flyback converter • Industrial drive • Power management system • Uninterruptible Power Supply (UPS) 4. Quick reference data Table 1.