PSMN025-100HS Description
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.
PSMN025-100HS Key Features
- High peak drain current IDM
- Copper clip and flexible Leads
- High operating junction temperature Tj = 175 °C
- Superior reliability
- Low body diode reverse recovery charge Qr