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PSMN025-100D - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.

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Datasheet Details

Part number PSMN025-100D
Manufacturer VBsemi
File Size 312.61 KB
Description N-Channel MOSFET
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    PSMN025-100D PSMN025-100D Datasheet www.VBsemi.com N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.0185 at VGS = 10 V ID (A)a 45 Qg (Typ.) 38 nC TO-252 D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.
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