| Part Number | PSMN025-100D |
|---|---|
| Manufacturer | VBsemi |
| Overview |
PSMN025-100D
PSMN025-100D Datasheet
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
100
0.0185 at VGS = 10 V
ID (A)a 45
Qg (Typ.) 38 nC
TO-252
D
FEATURES •.
* TrenchFET® Power MOSFET * 100 % Rg and UIS Tested APPLICATIONS * Primary Side Switch * Isolated DC/DC Converter G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current . |
PSMN025-100D Datasheet
The PSMN025-100D is a N-Channel MOSFET.
| Part Number | PSMN025-100D |
|---|---|
| Description | N-channel TrenchMOS transistor |
| Manufacturer | Philips Semiconductors |
| Overview |
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:• d.c. to d.c. converters • switche.
* ’Trench’ technology * Very low on-state resistance * Fast switching * Low thermal resistance g PSMN025-100D QUICK REFERENCE DATA d SYMBOL VDSS = 100 V ID = 47 A RDS(ON) ≤ 25 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-. |