PSMN025-80YL Datasheet | Nexperia

description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using Trench MOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - Logic level gate operation - Avalanche rated, 100% tested - LFPAK provides maximum power density in a Power SO8 package 3. Applications - Synchronous rectification in power supply equipment - Chargers & adaptors with Vout < 10 V - Fast charge & USB-PD applications - Battery powered motor control - LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge ID = 10 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 80 V - - 37 A - - 95 W - 22.2 27 mΩ - 5.8 - n C Nexperia N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified...