PSMN1R1-100CSE Datasheet | Nexperia

description N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212i). PSMN1R1-100CSE plements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I²R losses and deliver optimum efficiency when turned fully ON. 2. Features and benefits - Fully optimized Safe Opertating Area (SOA) for superior linear mode operation - Low RDSon for low I²R conduction losses - CCPAK1212i package for applications that demand the highest performance and reliability - Inverted package, suitable for top-side cooling 3. Applications - Hot swap - Load switch - Soft start - E-fuse - Telemunication systems based on a 48 V backplane/supply rail 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 50 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 IS = 25 A; d IS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Tj = 25 °C; Fig. 17 Min Typ Max Unit - - 100 V - - 430 A - - 1.55 k W - 0.87 1.09...