PSMN1R1-50SLH Description
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.
PSMN1R1-50SLH Key Features
- 280 Amp continuous current capability
- LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability
- Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)
- Ideal replacement for D2PAK and 10 x 12 mm leadless package types
- Qualified to 175 °C
- Avalanche rated, 100 % tested
- Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
- Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
- Narrow VGS(th) rating for easy paralleling and improved current sharing
- Very strong linear-mode / safe operating area characteristics for safe and reliable switching at