PSMN1R1-50SLH Datasheet PDF - nexperia 50V N-channel MOSFET Specs

PSMN1R1-50SLH - 50V N-channel MOSFET

Datasheet Summary

Description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance industrial applications.

Features

280 Amp continuous current capability.
LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating.
Ideal replacement for D2PAK and 10 x 12 mm leadless package types.
Qualified to 175 °C.
Avalanche rated, 100 % tested.
Low QG, QGD and QOSS for high efficie.

Datasheet Details

Part number	PSMN1R1-50SLH
Manufacturer	nexperia
File Size	247.96 KB
Description	50V N-channel MOSFET
Datasheet	PSMN1R1-50SLH Datasheet
Additional preview pages of the PSMN1R1-50SLH datasheet.

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Full PDF Text Transcription

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PSMN1R1-50SLH N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology 8 January 2021 Objective data sheet 1. General description 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications. 2.

Published: May 1, 2025 |