PSMN1R1-50SLH
PSMN1R1-50SLH is 50V N-channel MOSFET manufactured by Nexperia.
description
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced Trench MOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.
2. Features and benefits
- 280 Amp continuous current capability
- LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
- Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
- Ideal replacement for D2PAK and 10 x 12 mm leadless package types
- Qualified to 175 °C
- Avalanche rated, 100 % tested
- Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
- Superfast switching with soft body-diode recovery for low-spiking and ringing, remended for low EMI designs
- Unique “Schottky Plus” technology for Schottky-like switching performance and low IDSS leakage
- Narrow VGS(th) rating for easy paralleling and improved current sharing
- Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
3. Applications
- Brushless DC motor control
- Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
- Battery protection and Battery Management Systems (BMS)
- Load switch
- 10 cell lithium-ion battery applications (36 V ‒ 42 V)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state resistance
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C
Min Typ Max Unit
- -
- -
280 A
- -
375...
