PSMN1R1-50SLH Overview
Description
280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications.
Key Features
- 280 Amp continuous current capability
- LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
- Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
- Ideal replacement for D2PAK and 10 x 12 mm leadless package types
- Qualified to 175 °C
