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PSMN1R3-100ASF - N-channel MOSFET

General Description

NextPower 100 V, standard level gate drive MOSFET.

Qualified to 175 °C and recommended for high power industrial and consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • 355 Amps ID(max) continuous current rating.
  • Low QG × RDSon FOM for high efficiency switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CCPAK1212 PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package 6 December 2024 Product data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 355 Amps ID(max) continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant CCPAK1212 package 3. Applications • Battery protection • High power full and half-bridge configurations • BLDC motor control • OR-ing 4. Quick reference data Table 1.