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PSMN1R3-80SSF - N-channel MOSFET

General Description

NextPower 80 V, standard level gate drive MOSFET.

Qualified to 175 °C and recommended for industrial and consumer applications.

2.

Key Features

  • Low Qrr for higher efficiency and lower spiking.
  • 335 Amps ID(max) continuous current rating.
  • Low QG × RDSon FOM for high efficiency switching.

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Full PDF Text Transcription (Reference)

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PSMN1R3-80SSF NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package 7 April 2025 Product data sheet 1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 335 Amps ID(max) continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK88 package 3. Applications • Synchronous rectifier in AC-DC and DC-DC • Primary side switch in DC-DC • BLDC motor control • Full-bridge and half-bridge applications • Battery protection 4. Quick reference data Table 1.