Datasheet Summary
N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in
LFPAK56 using NextPower-S3 Schottky-Plus technology
27 August 2019
Product data sheet
1. General description
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Features and benefits
- 200 A continuous ID(max) rating
- Avalanche rated, 100% tested at IAS = 180 A
- Strong SOA (linear-mode) rating
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low QRR, QG and QGD for high system efficiency and...