PSMN1R7-40YLD Overview
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN1R7-40YLD Key Features
- 200 A continuous ID(max) rating
- Avalanche rated, 100% tested at IAS = 180 A
- Strong SOA (linear-mode) rating
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
- Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
- Low parasitic inductance and resistance