PSMN2R3-100SSJ
Overview
In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.
- Removes the need for VGS(th) matching
- Low ΔID enhances current sharing in parallel applications
- Reduced VGS(th) spread
- Low RDSon
- 255 A continuous ID Max
- Avalanche rated, 100% tested
- Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C
