PSMN2R3-100SSJ Overview
In high-power applications, it is mon practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally. Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turnon first, taking a larger share of the load current during...
PSMN2R3-100SSJ Key Features
- Removes the need for VGS(th) matching
- Low ΔID enhances current sharing in parallel
PSMN2R3-100SSJ Applications
- Removes the need for VGS(th) matching
- Low ΔID enhances current sharing in parallel applications