Datasheet4U Logo Datasheet4U.com

PSMN2R3-100SSJ Datasheet N-channel MOSFET

Manufacturer: Nexperia

Overview: PSMN2R3-100SSJ N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 13 January 2025 Preliminary data sheet 1.

General Description

In high-power applications, it is mon practice to connect two or more MOSFETs in parallel to provide high current capability.

Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.

Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turnon first, taking a larger share of the load current during the dynamic switching phase.

Key Features

  • Removes the need for VGS(th) matching.
  • Low ΔID enhances current sharing in parallel.

PSMN2R3-100SSJ Distributor