PSMN3R2-40YLD
PSMN3R2-40YLD is N-channel MOSFET manufactured by Nexperia.
Description
Simplified outline
S source mb
S source
S source
G gate mb
D mounting base; connected to drain
LFPAK56; Power SO8 (SOT669)
Graphic symbol
G mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
LFPAK56; Power-SO8
Description plastic, single-ended surface-mounted package; 4 terminals
Version SOT669
Nexperia
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS VDSM drain-source voltage peak drain-source voltage
25 °C ≤ Tj ≤ 175 °C tp = 20 ns; f = 500 k Hz; EDS(AL) = 200 n J; pulsed
VDGR VGS Ptot ID
IDM Tstg Tj Tsld(M) drain-gate voltage
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ gate-source voltage
Tj ≤ 175 °C total power dissipation Tmb = 25 °C; Fig. 1 drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 2 peak drain current storage temperature pulsed; tp ≤ 10 µs; Tmb = 25 °C junction temperature peak soldering temperature
Source-drain...