PSMN3R2-40YLD - N-channel MOSFET

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Table 3.

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Part number	PSMN3R2-40YLD
Manufacturer	nexperia
File Size	228.42 KB
Description	N-channel MOSFET
Datasheet	PSMN3R2-40YLD Datasheet
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PSMN3R2-40YLD 2 January 2019 Objective data sheet 1. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGD gate-drain charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 4.5 V; ID = 25 A; Tj = 25 °C ID = 25 A; VDS = 20 V; VGS = 4.5 V Min Typ Max Unit - - 40 V [1] - - 120 A - - 115 W -55 - 175 °C - 2.6 3.1 mΩ - 3.1 3.9 mΩ - [tbd] [tbd] nC - 4.5 9 nC [1] 120A Continuous current has been successfully demonstrated during application tests.

Published: Jun 4, 2019 |