PSMN3R5-25MLD Datasheet | Nexperia

description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. Next Power S3 portfolio utilising Nexperia’s unique “Schottky Plus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. Next Power S3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits - Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies - Superfast switching with soft-recovery; s-factor > 1 - Low spiking and ringing for low EMI designs - Unique “Schottky Plus” technology; Schottky-like performance with < 1 µA leakage at 25 °C - Optimised for 4.5 V gate drive - Low parasitic inductance and resistance - High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C - Exposed leads for optimal visual solder inspection 3. Applications - On-board DC:DC solutions for server and telemunications - Secondary-side synchronous rectification in telemunication applications - Voltage regulator modules (VRM) - Point-of-Load (POL) modules - Power delivery for V-core, ASIC, DDR, GPU, VGA and system ponents - Brushed and brushless motor control 4. Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter Conditions drain-source voltage 25 °C ≤ Tj ≤ 175 °C drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 total power dissipation Tmb = 25 °C; Fig. 1 Min Typ Max Unit - - 25 V [1] - - 70 A - - 65 W Nexperia N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using Next Power S3 Technology Symbol Parameter Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGD gate-drain charge Source-drain diode S softness factor Conditions...