PSMN3R5-40YSD Datasheet N-channel MOSFET

Manufacturer: Nexperia

Overview: PSMN3R5-40YSD N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product data sheet 1.

Datasheet Details

Part number	PSMN3R5-40YSD
Manufacturer	Nexperia
File Size	283.87 KB
Description	N-channel MOSFET
Datasheet	PSMN3R5-40YSD-nexperia.pdf

General Description

120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

Key Features

120 A capability.
Avalanche rated, 100% tested at I(AS) = 120 A.
NextPower-S3 technology delivers 'superfast switching with soft recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Low VSD Schottky-like body-diode.
Tighter VGS(th) limits for improved paralleling.
Wide Safe Operating Area (SOA) for reliable lin.

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