PSMN3R5-40YSD Overview
Key Specifications
Description
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
Key Features
- 120 A capability
- Avalanche rated, 100% tested at I(AS) = 120 A
- NextPower-S3 technology delivers 'superfast switching with soft recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
