PSMN3R5-40YSD
PSMN3R5-40YSD is N-channel MOSFET manufactured by Nexperia.
description
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced Trench MOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Features and benefits
- 120 A capability
- Avalanche rated, 100% tested at I(AS) = 120 A
- Next Power-S3 technology delivers 'superfast switching with soft recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
- Low VSD Schottky-like body-diode
- Tighter VGS(th) limits for improved paralleling
- Wide Safe Operating Area (SOA) for reliable linear mode operation
- High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to
175 °C
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
3. Applications
- Synchronous rectification
- DC-to-DC converters
- High performance and high efficiency power supplies
- BLDC motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10
Min Typ Max Unit
- - 40 V
[1]
- - 120 A
- - 115 W
-55
- 175 °C
- 3 3.5...
