PSMN3R5-40YSD Description
120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN3R5-40YSD Key Features
- 120 A capability
- Avalanche rated, 100% tested at I(AS) = 120 A
- NextPower-S3 technology delivers 'superfast switching with soft recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
- Low VSD Schottky-like body-diode
- Tighter VGS(th) limits for improved paralleling
- Wide Safe Operating Area (SOA) for reliable linear mode operation
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder