PSMN4R3-40MLH Datasheet | Nexperia

description 95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced Trench MOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits - Avalanche rated, 100% tested - Next Power-S3 technology delivers 'superfast switching with soft body-diode recovery' - Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies - Low spiking and ringing for low EMI designs - High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C - Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints - Low parasitic inductance and resistance 3. Applications - Secondary side synchronous rectification - DC-to-DC converters - Brushless DC motor drive - LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 VGS = 4.5 V; ID = 20 A; Tj = 25 °C; Fig. 10 ID = 25 A; VDS = 20 V; VGS = 4.5 V; Fig. 12; Fig. 13 Min Typ Max Unit - - [1] - - -...