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PSMN4R8-100YSE - N-channel MOSFET

General Description

N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C.

Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package.

Key Features

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation.
  • Low RDSon for low I2R conduction losses.
  • LFPAK56E package for.

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PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E 25 June 2021 Product data sheet 1. General description N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSon and a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSMN4R8-100YSE complements the latest "hot-swap" controllers ‒ robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I2R losses delivering optimum efficiency when turned fully ON and an 80% smaller footprint than existing D2PAK types. 2.