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PSMN5R0-40MSH - N-channel 40V MOSFET

General Description

85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high efficiency applications at high switching frequencies.

2.

Key Features

  • Avalanche rated, 100% tested.
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
  • Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies.
  • Low spiking and ringing for low EMI designs.
  • High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire bonds, qualified to 175 °C.
  • Exposed leads can be wave soldered, visual solder joint inspection and hig.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN5R0-40MSH N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology 27 April 2020 Product data sheet 1. General description 85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2.