Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
Features
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies.
- Superfast switching with soft-recovery; s-factor > 1.
- Low spiking and ringing for low EMI designs.
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C.
- Optimised for 4.5 V gate drive.
- Low parasitic inductance and resistance.
- High reliability clip bonded and solder die attach Mini Power SO8 package;.
PSMN5R3-25MLD Datasheet
